View 2SD1280_549281.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Transistor
2SD1280
Silicon NPN epitaxial planer type
For low-voltage type medium output power amplification
Unit: mm
s Features
q q
4.50.1 1.60.2
1.50.1
q
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C)
Ratings 20 20 5 2 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C
2.60.1
0.4max.
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
1:Base 2:Collector 3:Emitter
EIAJ:SC-62 Mini Power Type Package
Marking symbol : R
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1h
(Ta=25C)
Symbol ICBO VCEO VEBO hFE1*1 hFE2 VBE(sat) VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 500mA*2 VCE = 2V, IC = 1.5A*2 IC = 500mA, IB = 50mA*2 IC = 1A, IB = 50mA*2 150 18
*2
min
typ
max 1
Unit A V V
20 5 90 50 150 100 1.2 0.5 360
VCB = 6V, IE = -50mA, f = 200MHz VCB = 6V, IE = 0, f = 1MHz
MHz pF Pulse measurement
FE1
Rank classification
Rank hFE1 Q 90 ~ 155 RQ R 130 ~ 210 RR S 180 ~ 280 RS T 250 ~ 360 RT
Marking Symbol
2.50.1
+0.25
V V
1
Transistor
PC -- Ta
1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 1.0 1.0 IB=5.0mA 4.5mA 4.0mA 0.6 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.1 0.2 IC/IB=10 20
2SD1280
IC -- VCE
1.2 Ta=25C
IC -- VCE(sat)
Collector power dissipation PC (W)
1.0
Collector current IC (A)
0.8
0.8
Collector current IC (A)
0.8
0.6
0.6
0.4
0.4
0.4
0.2
0.2
0.2
0.3
0.4
0.5
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC -- IB
Collector to emitter saturation voltage VCE(sat) (V)
1.2 VCE=2V Ta=25C 1.0 100 30 10 3 1
VCE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=20 100 30 10 3
VBE(sat) -- IC
IC/IB=10
Collector current IC (A)
0.8
25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
0.6
Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C
0.4
0.2
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Base current IB (mA)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
600 VCE=2V 200 175 150 125 100 75 50 25 0 0.01 0.03 0 -1
fT -- I E
50
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=6V Ta=25C IE=0 f=1MHz Ta=25C 40
Forward current transfer ratio hFE
500
400
Transition frequency fT (MHz)
30
300
Ta=75C 25C -25C
20
200
100
10
0 -3 -10 -30 -100 1 3 10 30 100
0.1
0.3
1
3
10
Collector current IC (A)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Transistor
ICBO -- Ta
104 VCB=10V 105
2SD1280
ICEO -- Ta
VCE=18V
Area of safe operation (ASO)
10 3I CP Single pulse Ta=25C t=10ms t=1s 0.3 0.1 0.03 0.01 0.003 DC
103
Collector current IC (A)
0 20 40 60 80 100 120 140 160
104
1
IC
ICBO (Ta) ICBO (Ta=25C)
ICEO (Ta) ICEO (Ta=25C)
103
102
102
10 10
1 0 20 40 60 80 100 120 140 160
1
0.001 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

▲Up To Search▲

Price & Availability of 2SD1280

	To Download 2SD1280 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .